Edge ring arrangement with moveable edge rings
US-2024355667-A1 · Oct 24, 2024 · US
US9099503B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099503-B2 |
| Application number | US-25348008-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 17, 2008 |
| Priority date | Oct 18, 2007 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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In a plasma etching apparatus, a first high frequency for plasma generation and a second high frequency for ion attraction are respectively applied from two high frequency supplies to a susceptor. Further, DC voltage is applied from a variable DC power supply to an upper electrode via a filter circuit. An annular DC ground part attached to an upper side surface of the susceptor is connected to a filter circuit. This filter circuit allows a specific frequency component of the intermodulation distortion generated in a plasma by a series resonant to selectively flow to a ground line.
Opening claim text (preview).
What is claimed is: 1. A plasma processing apparatus comprising: a vacuum-evacuable processing chamber; a first electrode for mounting thereon a substrate to be processed in the processing chamber; a second electrode facing the first electrode in parallel in the processing chamber; a processing gas supply unit for supplying a processing gas to a processing space between the first electrode and the second electrode; a first high frequency power supply for applying a first h…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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