Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
Photosite with pinned photodiode
US9099366B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099366-B2 |
| Application number | US-201213529045-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 21, 2012 |
| Priority date | Aug 22, 2011 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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Abstract
Official abstract text for this publication.
A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well.
First claim
Opening claim text (preview).
What is claimed is: 1. A photosite, comprising: a semiconductor substrate of a first conductivity type and having an upper surface; and a photodiode confined in a direction orthogonal to the upper surface of the substrate, comprising: a first well in the substrate and having a second conductivity type opposite the first conductivity type; a semiconductor zone configured to store charge comprising a second well of the first conductivity type that is formed in the first well an…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9099366B2 cover?
- A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally p…
- Who is the assignee on this patent?
- Roy Francois, Michelot Julien, St Microelectronics Sa, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10F39/802. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 04 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).