Diodes with multiple junctions and fabrication methods therefor

Patent metadata

Field	Value
Publication number	US-9093567-B2
Application number	US-201314072151-A
Country	US
Kind code	B2
Filing date	Nov 5, 2013
Priority date	Nov 5, 2013
Publication date	Jul 28, 2015
Grant date	Jul 28, 2015

Abstract

An embodiment of a diode includes a semiconductor substrate, a first contact region having a first conductivity type, a second contact region laterally spaced from the first contact region, and having a second conductivity type, an intermediate region disposed in the semiconductor substrate between the first and second contact regions, electrically connected with the first contact region, and having the first conductivity type, and a buried region disposed in the semiconductor substrate, having the second conductivity type, and electrically connected with the second contact region. The buried region extends laterally across the first contact region and the intermediate region to establish first and second junctions, respectively. The first junction has a lower breakdown voltage than the second junction.

First claim

The invention claimed is:

1. A diode comprising:
a semiconductor substrate having a surface;
a first contact region disposed at the surface of the semiconductor substrate and having a first conductivity type;
a second contact region disposed at the surface of the semiconductor substrate, laterally spaced from the first contact region, and having a second conductivity type;
an intermediate region disposed in the semiconductor substrate between the first and second contact regions, electrically connected with the first contact region, and having the first conductivity type; and
a buried region disposed in the semiconductor substrate, having the second conductivity type, and electrically connected with the second contact region;
wherein the buried region extends laterally across the first contact region and the intermediate region to establish first and second junctions, respectively; and
wherein the first junction has a lower breakdown voltage than the second junction.

2. The diode of claim 1 , further comprising a further buried region disposed in the semiconductor substrate, having the second conductivity type, and electrically connected with the second contact region, wherein:
the further buried region is disposed adjacent the first contact region to establish a third junction; and
the third junction has a lower breakdown voltage than the first and second junctions.

3. The diode of claim 2 , wherein the further buried region is laterally spaced from the intermediate region such that the first and second junctions are disposed between the third junction and the second contact region.

4. The diode of claim 2 , wherein the buried region and the further buried region have dopant concentration levels on a same order of magnitude.

5. The diode of claim 2 , wherein the further buried region is disposed on the buried region between the first contact region and the buried region.

6. The diode of claim 1 , wherein the intermediate region and the second contact region are configured as respective rings that surround the first contact region.

7. The diode of claim 1 , further comprising a ring-shaped well region in the semiconductor substrate, electrically connected with the buried region, and having the second conductivity type, wherein:
the second contact region is disposed in the ring-shaped well region; and
the ring-shaped well region has a higher dopant concentration level than the buried region.

8. The diode of claim 1 , further comprising a silicide block supported by the semiconductor substrate and disposed over the intermediate region.

9. A diode comprising:
a semiconductor substrate having a surface;
a first contact region disposed at the surface of the semiconductor substrate and having a first conductivity type;
a second contact region disposed at the surface of the semiconductor substrate, laterally spaced from the first contact region, and having a second conductivity type;
an intermediate region disposed in the semiconductor substrate between the first and second contact regions, electrically connected with the first contact region, and having the first conductivity type; and
a buried region disposed in the semiconductor substrate, having the second conductivity type, and electrically connected with the second contact region;
wherein the buried region extends laterally from the second contact region to the first contact region and across the intermediate region to establish first and second junctions with the first contact region and the intermediate region, respectively; and
wherein the first junction has a lower breakdown voltage than the second junction.

10. The diode of claim 9 , further comprising a further buried region disposed in the semiconductor substrate, having the second conductivity type, and electrically connected with the second contact region, wherein:
the further buried region is disposed adjacent the first contact region to establish a third junction;
the third junction has a lower breakdown voltage than the first and second junctions.

11. The diode of claim 10 , wherein the further buried region is laterally spaced from the intermediate region such that the first and second junctions are disposed between the third junction and the second contact region.

12. The diode of claim 10 , wherein the further buried region is disposed on the buried region between the first contact region and the buried region.

13. The diode of claim 9 , wherein the intermediate region and the second contact region are configured as respective rings that surround the first contact region.

14. The diode of claim 9 , further comprising a silicide block supported by the semiconductor substrate and disposed over the intermediate region.

Assignees

• Lin Xin
• Yang Hongning
• Zuo Jiang-Kai
• Freescale Semiconductor Inc

Inventors

• Lin Xin
• Yang Hongning
• Zuo Jiang-Kai

Classifications

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H10P14/414

  of metal-silicide materials · CPC title

• H10D62/129

  Cathode regions of diodes · CPC title