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US-2024248390-A1 · Jul 25, 2024 · US
Method for forming silicon-containing resist underlayer film
US9091925B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9091925-B2 |
| Application number | US-201313895957-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 16, 2013 |
| Priority date | Jun 13, 2012 |
| Publication date | Jul 28, 2015 |
| Grant date | Jul 28, 2015 |
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Abstract
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The invention provides a method for forming a silicon-containing resist underlayer film, the method for coating and forming a silicon-containing resist underlayer film by spin coating method comprising: feeding an aqueous alkaline solution in a pipe of an apparatus for coating and forming a film by spin coating method to clean therein; supplying a silicon-containing resist underlayer film composition via the pipe; and coating the silicon-containing resist underlayer film on a substrate to form a film. There can be provided a method for forming a silicon-containing resist underlayer film capable of reducing coating defects after forming a film by cleaning and removing a precipitate derived from silicon-containing resist underlayer film composition that precipitates and adheres in a pipe of an apparatus for coating and forming a film.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for forming a silicon-containing resist underlayer film comprising: feeding an aqueous alkaline solution in a pipe of an apparatus that is used for coating and forming a film by spin coating method to clean therein; and supplying a silicon-containing resist underlayer film composition via the pipe; and coating the silicon-containing resist underlayer film on a substrate by spin coating method to form a film. 2. The method for…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- G03F7/162Primary
Physics · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9091925B2 cover?
- The invention provides a method for forming a silicon-containing resist underlayer film, the method for coating and forming a silicon-containing resist underlayer film by spin coating method comprising: feeding an aqueous alkaline solution in a pipe of an apparatus for coating and forming a film by spin coating method to clean therein; supplying a silicon-containing resist underlayer film compo…
- Who is the assignee on this patent?
- Shinetsu Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification G03F7/162. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Jul 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).