Method of manufacturing single crystal

Patent metadata

Field	Value
Publication number	US-9090992-B2
Application number	US-201013257742-A
Country	US
Kind code	B2
Filing date	Nov 12, 2010
Priority date	Nov 30, 2009
Publication date	Jul 28, 2015
Grant date	Jul 28, 2015

Abstract

A seed crystal having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal is increased. A coating film including carbon is formed on the backside surface of the seed crystal. The coating film and a pedestal are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal to the pedestal. A single crystal is grown on the seed crystal. Before the growth is performed, a carbon film is formed by carbonizing the coating film.

First claim

The invention claimed is:

1. A method of manufacturing a single crystal, comprising the steps of:
preparing a seed crystal having a frontside surface and a backside surface;
increasing surface roughness of said backside surface of said seed crystal;
forming a coating film including carbon on said backside surface of said seed crystal after said step of increasing the surface roughness of said backside surface;
fixing said seed crystal to a pedestal by bonding said pedestal and said coating film using an adhesive interposed therebetween;
forming a carbon film by carbonizing said coating film; and
growing the single crystal on said seed crystal fixed to said pedestal.

2. The method of manufacturing the single crystal according to claim 1 , wherein said step of increasing the surface roughness of said backside surface is performed by treating said backside surface using abrasive grains.

3. The method of manufacturing the single crystal according to claim 2 , wherein grain size distribution of said abrasive grains has a component of not less than 16 μm.

4. The method of manufacturing the single crystal according to claim 1 , wherein said coating film is an organic film, and said carbon film is formed by carbonizing said organic film.

5. The method of manufacturing the single crystal according to claim 4 , wherein said organic film is formed of an organic resin.

6. The method of manufacturing the single crystal according to claim 5 , wherein said organic resin is a photosensitive resin.

7. The method of manufacturing the single crystal according to claim 1 , wherein said step of forming said coating film is performed using spin coating.

8. The method of manufacturing the single crystal according to claim 1 , further comprising the step of polishing said pedestal prior to said step of fixing said seed crystal to said pedestal.

9. The method of manufacturing the single crystal according to claim 1 , wherein said adhesive includes a resin which will become non-graphitizable carbon by being heated, heat-resistant fine particles, and a solvent.

10. The method of manufacturing the single crystal according to claim 9 , wherein said adhesive includes a carbohydrate.

11. The method of manufacturing the single crystal according to claim 1 , wherein said seed crystal is formed of silicon carbide.

12. The method of manufacturing the single crystal according to claim 1 , wherein a surface of said pedestal facing said seed crystal includes a surface made of carbon.

13. A method of manufacturing a single crystal, comprising the steps of:
preparing a seed crystal having a frontside surface and a backside surface, said backside surface being an as-sliced surface formed by slicing with a wire saw;
forming a coating film including carbon on said backside surface of said seed crystal;
fixing said seed crystal to a pedestal by bonding said pedestal and said coating film using an adhesive interposed therebetween;
forming a carbon film by carbonizing said coating film; and
growing the single crystal on said seed crystal fixed to said pedestal.

14. The method of manufacturing the single crystal according to claim 13 , wherein said coating film is an organic film, and said carbon film is formed by carbonizing said organic film.

15. The method of manufacturing the single crystal according to claim 14 , wherein said organic film is formed of an organic resin.

16. The method of manufacturing the single crystal according to claim 15 , wherein said organic resin is a photosensitive resin.

17. The method of manufacturing the single crystal according to claim 13 , wherein said step of forming said coating film is performed using spin coating.

18. The method of manufacturing the single crystal according to claim 13 , further comprising the step of polishing said pedestal prior to said step of fixing said seed crystal to said pedestal.

19. The method of manufacturing the single crystal according to claim 13 , wherein said adhesive includes a resin which will become non-graphitizable carbon by being heated, heat-resistant fine particles, and a solvent.

20. The method of manufacturing the single crystal according to claim 19 , wherein said adhesive includes a carbohydrate.

21. The method of manufacturing the single crystal according to claim 13 , wherein said seed crystal is formed of silicon carbide.

22. The method of manufacturing the single crystal according to claim 13 , wherein a surface of said pedestal facing said seed crystal includes a surface made of carbon.

Assignees

• Nishiguchi Taro
• Sasaki Makoto
• Harada Shin
• Sumitomo Electric Industries

Inventors

• Nishiguchi Taro
• Sasaki Makoto
• Harada Shin

Classifications

• C30B23/025

  characterised by the substrate · CPC title

• C30B29/36 Primary

  Carbides · CPC title

• C30B23/08 Primary

  by condensing ionised vapours (by reactive sputtering C30B25/06) · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H10P14/2904

  Silicon carbide · CPC title