Semiconductor device
US-2024421022-A1 · Dec 19, 2024 · US
US9087828B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9087828-B2 |
| Application number | US-201313797440-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2013 |
| Priority date | Mar 12, 2013 |
| Publication date | Jul 21, 2015 |
| Grant date | Jul 21, 2015 |
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Official abstract text for this publication.
A semiconductor device with thick bottom metal comprises a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposing from the top plastic package layer, a die paddle for the semiconductor chip to mount thereon and a plastic package body.
Opening claim text (preview).
The invention claimed is: 1. A preparation method of a semiconductor device with a thick bottom metal comprises the following steps: providing a lead frame including a plurality of die paddles, wherein the adjacent die paddles are connected to each other by one or more connecting parts, each connecting part comprises a support part arranged at a back surface of the connecting part and extending along a direction away from the back surface, wherein bottom surfaces of all support pa…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Electricity · mapped topic
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