Multiple exposures in extreme ultraviolet lithography

Patent metadata

Field	Value
Publication number	US-9075313-B2
Application number	US-201313910925-A
Country	US
Kind code	B2
Filing date	Jun 5, 2013
Priority date	Mar 13, 2013
Publication date	Jul 7, 2015
Grant date	Jul 7, 2015

Abstract

An extreme ultraviolet lithography method is disclosed. In an example, the EUVL method comprises providing at least two mask areas having a same pattern, forming a resist layer over a substrate, determining an optimized exposure dose based on an exposure dose for a pre-specified pattern on one of the at least two mask areas to achieve a pre-specified target dimension under a corresponding single exposure process, and performing a multiple exposure process for exposing a same area of the resist layer to the same pattern. The multiple exposure process comprises a plurality of exposure processes, wherein each of the plurality of exposure processes uses an exposure dose that is less than the optimized exposure dose and a sum of the exposure dose of each of the plurality of exposure processes is approximately equal to the optimized exposure dose.

First claim

What is claimed is:

1. An extreme ultraviolet lithography (EUVL) method, the EUVL method comprising:
providing at least two mask areas having a same pattern;
forming a resist layer over a substrate;
determining an optimized exposure dose; and
performing a multiple exposure process to expose a same area of the resist layer to the same pattern, the multiple exposure process comprising a plurality of exposure processes;
wherein each of the plurality of exposure processes uses…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Yu Shinn-Sheng
• Yen Anthony
• Lu Yen-Cheng

Classifications

• G03F7/2004

  Physics · mapped topic

• G03F7/2022 Primary

  Physics · mapped topic

• G03F7/70466

  Physics · mapped topic

• G03F1/22

  Physics · mapped topic

• G03F7/7065

  Physics · mapped topic