Nonvolatile memory device and method for manufacturing same
US-9224788-B2 · Dec 29, 2015 · US
US9070877B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070877-B2 |
| Application number | US-201313972718-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 21, 2013 |
| Priority date | May 5, 2011 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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A method can include forming at least one memory layer over a first electrode, the memory layer having at least one element formed therein that oxidizes in the presence of an electric field to form conductive paths within the memory layer; and forming an inhibiting layer within the memory layer that increases an oxidation energy for the at least one element, as compared to the oxidation energy for the at least one element in the memory layer without the inhibiting layer.
Opening claim text (preview).
What is claimed is: 1. A method, comprising: forming at least one memory layer over a first electrode, the memory layer having at least one element formed therein that oxidizes in the presence of an electric field to form conductive paths within the memory layer; and forming an inhibiting layer within the memory layer that increases an oxidation energy for the at least one element, as compared to the oxidation energy for the at least one element in the memory layer without the i…
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