Phase change memory stack with treated sidewalls
US-2015318038-A1 · Nov 5, 2015 · US
US9070876B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070876-B2 |
| Application number | US-201114004121-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 15, 2011 |
| Priority date | Mar 18, 2011 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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A variable resistance element is formed by sandwiching a metal oxide layer whose resistance changes between a pair of electrodes and the metal oxide layer includes a pair of variable resistance layers whose resistances change by formation of a current path and a branching suppression layer which is sandwiched between the variable resistance layers and suppresses branching of the current path.
Opening claim text (preview).
The invention claimed is: 1. A variable resistance element, comprising: a metal oxide layer having a variable resistance, sandwiched between a pair of electrodes, the metal oxide layer comprising: a pair of variable resistance layers having resistances which change by formation of a current path; and a branching suppression layer which is sandwiched between the variable resistance layers and suppresses branching of the current path, wherein the variable resistance layer and…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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