Variable resistance element and semiconductor storage device

US9070876B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9070876-B2
Application numberUS-201114004121-A
CountryUS
Kind codeB2
Filing dateNov 15, 2011
Priority dateMar 18, 2011
Publication dateJun 30, 2015
Grant dateJun 30, 2015

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A variable resistance element is formed by sandwiching a metal oxide layer whose resistance changes between a pair of electrodes and the metal oxide layer includes a pair of variable resistance layers whose resistances change by formation of a current path and a branching suppression layer which is sandwiched between the variable resistance layers and suppresses branching of the current path.

First claim

Opening claim text (preview).

The invention claimed is: 1. A variable resistance element, comprising: a metal oxide layer having a variable resistance, sandwiched between a pair of electrodes, the metal oxide layer comprising: a pair of variable resistance layers having resistances which change by formation of a current path; and a branching suppression layer which is sandwiched between the variable resistance layers and suppresses branching of the current path, wherein the variable resistance layer and…

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What does patent US9070876B2 cover?
A variable resistance element is formed by sandwiching a metal oxide layer whose resistance changes between a pair of electrodes and the metal oxide layer includes a pair of variable resistance layers whose resistances change by formation of a current path and a branching suppression layer which is sandwiched between the variable resistance layers and suppresses branching of the current path.
Who is the assignee on this patent?
Ito Kimihiko, Nec Corp
What technology area does this patent fall under?
Primary CPC classification H01L45/145. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).