Memory cell structures

Patent metadata

Field	Value
Publication number	US-9070874-B2
Application number	US-201314085192-A
Country	US
Kind code	B2
Filing date	Nov 20, 2013
Priority date	Jul 1, 2011
Publication date	Jun 30, 2015
Grant date	Jun 30, 2015

Abstract

The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode, and a storage element between the first electrode and the electrode contact portion of the second electrode.

First claim

What is claimed is:

1. A memory cell, comprising:
a resistance variable material formed on a first electrode, wherein the first electrode has non-vertical sidewalls;
a first dielectric material formed on a top surface of the resistance variable material and having a valley formed therein; and
a contact portion of a second electrode formed in the valley such that the contact portion has non-vertical sidewalls defined by the valley.

2. The memory cell of c…

Assignees

• Micron Technology Inc

Inventors

• Sills Scott E

Classifications

• H01L27/2472

  Electricity · mapped topic

• H01L45/146

  Electricity · mapped topic

• H01L45/1266

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01L45/147

  Electricity · mapped topic