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Semiconductor light-emitting device and method for manufacturing same
US9070837B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070837-B2 |
| Application number | US-40039609-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 9, 2009 |
| Priority date | Aug 28, 2008 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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- Title
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Abstract
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A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor light-emitting device comprising: a laminated structure including, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second semiconductor layer and the light-emitting layer being selectively removed and a part of the first semiconductor layer being exposed to a first main surface on a side of the second semiconducto…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9070837B2 cover?
- A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the ligh…
- Who is the assignee on this patent?
- Katsuno Hiroshi, Ohba Yasuo, Kaneko Kei, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/84. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).