Photonic device

Patent metadata

Field	Value
Publication number	US-9070815-B2
Application number	US-201313924487-A
Country	US
Kind code	B2
Filing date	Jun 21, 2013
Priority date	Aug 23, 2012
Publication date	Jun 30, 2015
Grant date	Jun 30, 2015

Abstract

A photonic device is provided. The photonic device includes: a semiconductor layer including first and second regions; an insulating layer covering the semiconductor layer; and first and second plugs extending to pass through the insulating layer and electrically connected to the corresponding first and second regions. The first plug is in a rectifying contact with the first region, and the second plug is in an ohmic contact with the second region.

First claim

What is claimed is:

1. A photonic device comprising:
a semiconductor layer including a first region, a second region, and a third region disposed between the first and second regions;
an insulating layer covering the semiconductor layer; and
first and second plugs extending to pass through the insulating layer and electrically connected to the corresponding first and second regions;
wherein:
the third region is configured to allow charge carriers to flow between the first and second regions;
the third region includes a portion that protrudes from a surface of the first or second region;
the first plug is in a rectifying contact with the first region; and
the second plug is in an ohmic contact with the second region.

2. The photonic device of claim 1 , further comprising:
first and second electrode pads disposed on the insulating layer;
wherein the first and second regions are electrically connected with the first and second electrode pads by the respective first and second plugs.

3. The photonic device of claim 1 , wherein:
the first and second regions have substantially similar charge carrier concentrations.

4. The photonic device of claim 3 , wherein the first and third regions are intrinsic regions.

5. The photonic device of claim 3 , wherein the first and third regions are extrinsic regions doped with dopants of a first or second conductivity type.

6. The photonic device of claim 1 , wherein:
the second region is doped with a dopant of a first or second conductivity type; and
the second region has a higher charge carrier concentration than the first region.

7. The photonic device of claim 1 , wherein:
the second region includes a first doped region of a first or second conductivity type and a second doped region of the first or second conductivity type;
the second doped region has a higher charge carrier concentration than the first doped region; and
the second plug is in an ohmic contact with the second doped region.

8. The photonic device of claim 1 , wherein at least one of the first plug and the second plug has a bottom surface contacting a top surface of the corresponding first region or second region.

9. The photonic device of claim 1 , wherein at least one of the first plug and the second plug has a bottom surface buried in the corresponding first region or second region.

10. The photonic device of claim 1 , further comprising:
a third plug extending to pass through the insulating layer and electrically connected to the first region;
wherein the third plug is in a rectifying contact with the first region.

11. The photonic device of claim 1 , wherein the first plug has a different width from the second plug.

12. The photonic device of claim 1 , wherein:
the semiconductor layer further comprises a third region that is disposed between the first and second regions, allows charges carriers to flow between the first and second regions, and provides a path along which an optical signal moves; and
the first through third regions form a phase shifter.

13. The photonic device of claim 1 , wherein the semiconductor layer further comprises a third region that protrudes from one side with respect to the first and second regions and is separated from the first and second plugs.

14. The photonic device of claim 1 , wherein:
the semiconductor layer further comprises a third region that is disposed between the first and second regions and is configured to generate charge carriers in response to an optical signal; and
the first through third regions form a photodiode.

15. The photonic device of claim 1 , wherein:
the semiconductor layer further comprises a first layer having the first region disposed at a top portion thereof and a third region configured to generate charge carriers in response to an optical signal, and a second layer disposed below the first layer and having the second region at a top portion thereof; and
the first through third regions form a photodiode.

16. The photonic device of claim 1 , wherein:
the first plug is configured to transmit a first electrical signal to the semiconductor layer; and
the second plug is configured to transmit a second electrical signal to the semiconductor layer.

17. A system, comprising:
at least one electro-optical modulator configured to modulate an optical signal to generate a modulated optical signal;
wherein each electro-optical modulator includes a phase shifter comprising:
a semiconductor layer including a first region, a second region, and a third region disposed between the first and second regions;
an insulating layer covering the semiconductor layer; and
first and second plugs extending to pass through the insulating layer and electrically connected to the corresponding first and second regions;
wherein:
the third region is configured to allow charge carriers to flow between the first and second regions;
the third region includes a portion that protrudes from a surface of the first or second region;
the first plug is in a rectifying contact with the first region and
the second plug is in an ohmic contact with the second region.

18. A method, comprising:
forming a semiconductor layer including first and second regions on a substrate;
doping the second region;
forming an insulating layer over the semiconductor layer;
forming a rectifying contact with the first region that passes through the insulating layer; and
forming an ohmic contact with the second region that passes through the insulating layer.

19. The method of claim 18 , wherein:
forming the semiconductor layer comprises forming the semiconductor layer with a third region protruding from the first and second regions;
forming a pattern over the first and third regions that exposes at least part of the second region; and
doping the second region after forming the pattern.

20. The method of claim 18 , wherein doping the second region comprises doping the second region with a carrier concentration higher than a carrier concentration of the first region.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Kwang-Hyun
• Shin Dong-Jae
• Ji Ho-Chul

Classifications

• H10F30/223 Primary

  the potential barrier being a PIN barrier · CPC title

• H10F99/00 Primary

  Subject matter not provided for in other groups of this subclass · CPC title

• G02F1/015

  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction (G02F1/03 takes precedence) · CPC title

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title