Semiconductor device having fin structure in peripheral region and method for forming the same

Patent metadata

Field	Value
Publication number	US-9070577-B2
Application number	US-201314097008-A
Country	US
Kind code	B2
Filing date	Dec 4, 2013
Priority date	Dec 24, 2012
Publication date	Jun 30, 2015
Grant date	Jun 30, 2015

Abstract

In order to fabricate a semiconductor device, a semiconductor substrate in a peripheral region is etched to form a plurality of holes. A gap-filling material is buried in the holes of the semiconductor substrate in the peripheral region, and first and second device isolation films are formed in the semiconductor device. A fin structure is formed by recessing the gap-filling material, and a gate is formed over a surface including the fin structure. As a result, operation characteristics of transistors formed in the peripheral region are improved and the short channel effects are also reduced.

First claim

What is claimed is:

1. A semiconductor device comprising:
an active region disposed in a semiconductor substrate of a peripheral region;
one or more first device isolation regions disposed in the active region;
a second device isolation region defining the active region;
a fin-type active region that includes divided portions of the active region defined by the one or more first device isolation regions;
an insulation film filling the first and second device isolation regi…

Assignees

• Sk Hynix Inc

Inventors

• Lee Hyun Jin

Classifications

• H10D30/62

  Electricity · mapped topic

• H10D84/834 Primary

  Electricity · mapped topic

• H10D30/024 Primary

  Electricity · mapped topic

• H10D84/0158

  Electricity · mapped topic

• H10D84/038

  Electricity · mapped topic