Substrate correction device, substrate lamination device, substrate processing system, substrate correction method, substrate processing method, and semiconductor device manufacturing method
US-2024404859-A1 · Dec 5, 2024 · US
Silicon carbide substrate and method of manufacturing silicon carbide substrate
US9070567B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070567-B2 |
| Application number | US-201013128438-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 9, 2010 |
| Priority date | Feb 18, 2009 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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Abstract
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A SiC substrate includes a first orientation flat parallel to the <11-20> direction, and a second orientation flat being in a direction intersecting the first orientation flat and being different from the first orientation flat in length. An alternative SiC substrate has a rectangular plane shape, and a main surface of the substrate includes a first side parallel to the <11-20> direction, a second side in a direction perpendicular to the first side, and a third side connecting the first side to the second side. A length of the third side projected in a direction in which the first side extends is different from a length of the third side projected in a direction in which the second side extends.
First claim
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The invention claimed is: 1. A silicon carbide substrate comprising: a main surface having a circular or elliptical plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane; a first orientation flat parallel to the <11-20> direction; and a second orientation flat being in a direction intersecting said first orientation flat and be…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9070567B2 cover?
- A SiC substrate includes a first orientation flat parallel to the <11-20> direction, and a second orientation flat being in a direction intersecting the first orientation flat and being different from the first orientation flat in length. An alternative SiC substrate has a rectangular plane shape, and a main surface of the substrate includes a first side parallel to the <11-20> direction, a sec…
- Who is the assignee on this patent?
- Sasaki Makoto, Masuda Takeyoshi, Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification H10P95/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).