Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
US9065992B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9065992-B2 |
| Application number | US-201213342393-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 3, 2012 |
| Priority date | Jan 28, 2011 |
| Publication date | Jun 23, 2015 |
| Grant date | Jun 23, 2015 |
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Official abstract text for this publication.
A solid-state image sensor includes a semiconductor region including a plurality of photoelectric converters from which signals are allowed to be independently read out; a first microlens; and a second microlens which is arranged between the first microlens and the semiconductor region, wherein the second microlens includes a central portion and a peripheral portion that surrounds the central portion, and a power of the peripheral portion is a positive value and larger than a power of the central portion.
Opening claim text (preview).
What is claimed is: 1. A solid-state image sensor including a plurality of pixels for detecting focus based on a phase-difference detection method, each of the plurality of pixels including: a semiconductor region including a plurality of photoelectric converters from which signals are allowed to be independently read out for detecting focus; a first microlens; a second microlens, made of a single material, which is arranged between the first microlens and the semiconductor re…
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