Semiconductor die, semiconductor package and substrate dicing method
US-2024421000-A1 · Dec 19, 2024 · US
US9064950B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9064950-B2 |
| Application number | US-201314135506-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 19, 2013 |
| Priority date | Dec 1, 2009 |
| Publication date | Jun 23, 2015 |
| Grant date | Jun 23, 2015 |
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Official abstract text for this publication.
An embodiment of the present invention relates to a chip package and fabrication method thereof, which includes a chip protection layer or an additional etching stop layer to cover conducting pads to prevent dicing residue from damaging or scratching the conducting pads. According to another embodiment, a chip protection layer, an additional etching stop layer formed thereon, or a metal etching stop layer level with conducting pads or combinations thereof may be used when etching an intermetal dielectric layer at a structural etching region and a silicon substrate to form an opening for subsequent semiconductor manufacturing processes.
Opening claim text (preview).
What is claimed is: 1. A method for forming a chip package, comprising: providing a semiconductor substrate covered by an intermetal dielectric layer, wherein the semiconductor substrate includes a plurality of device regions, a structural etching region, and a peripheral pad region spaced apart laterally, wherein the peripheral pad region contains a plurality of conducting pads; providing a chip protection layer covering the intermetal dielectric layer and the conducting pads;…
Electricity · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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