Decoupling capacitor for FinFET compatible process

Patent metadata

Field	Value
Publication number	US-9064720-B2
Application number	US-201313753258-A
Country	US
Kind code	B2
Filing date	Jan 29, 2013
Priority date	Dec 28, 2012
Publication date	Jun 23, 2015
Grant date	Jun 23, 2015

Abstract

A decoupling capacitor formed from a fin field-effect transistor (FinFET) and method of using the same are provided. An embodiment decoupling capacitor includes a fin field-effect transistor (FinFET) having a semiconductor substrate supporting a gate stack, a source, and a drain, a first terminal coupled to the semiconductor substrate and to the gate stack, the first terminal configured to couple with a first power rail, and a second terminal coupled to the source and to the drain, the second terminal configured to couple with a second power rail having a higher potential than the first power rail.

First claim

What is claimed is:

1. A device comprising:
capacitor having a semiconductor substrate supporting a fin disposed between isolation regions, the fin including a first region and a second region on opposing sides of a third region beneath a gate stack;
a first terminal coupled to the semiconductor substrate and to the gate stack such that the semiconductor substrate and the gate stack have a same potential, the first terminal configured to couple with a first power rail; and
a s…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Lee Jam-Wem
• Chang Yi-Feng

Classifications

• H10D30/62

  Electricity · mapped topic

• H10D84/212

  Electricity · mapped topic

• H10D84/813 Primary

  Electricity · mapped topic

• Y10T29/41

  Cross-Sectional Technologies · mapped topic

• H01L27/0805

  Electricity · mapped topic