System and method for integrated circuits with cylindrical gate structures
US-2015024559-A1 · Jan 22, 2015 · US
High ion and low sub-threshold swing tunneling transistor
US9054191B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9054191-B2 |
| Application number | US-201314055893-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 17, 2013 |
| Priority date | Oct 17, 2013 |
| Publication date | Jun 9, 2015 |
| Grant date | Jun 9, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Devices and manufacturing methods thereof are presented. The device includes a substrate and a fin-type transistor disposed on the substrate. The transistor includes a fin structure that protrudes from the substrate to serve as a source of the transistor. The fin structure is doped with dopants of a first polarity. The transistor also includes a gate layer formed over and around a first end of the fin structure to serve as a gate of the transistor. A drain layer is disposed over the fin structure and adjacent to the gate layer to serve as a drain of the transistor. The drain layer is doped with dopants of a second polarity opposite the first polarity.
First claim
Opening claim text (preview).
What is claimed is: 1. A device comprising: a substrate; and a fin-type transistor disposed on the substrate, wherein the transistor comprises a fin structure protruding from the substrate to serve as a source of the transistor, the fin structure doped with dopants of a first polarity, a gate layer disposed over and around a first end of the fin structure to serve as a gate of the transistor, and a drain layer disposed over the fin structure and adjacent to the gate layer t…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10D84/0158Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9054191B2 cover?
- Devices and manufacturing methods thereof are presented. The device includes a substrate and a fin-type transistor disposed on the substrate. The transistor includes a fin structure that protrudes from the substrate to serve as a source of the transistor. The fin structure is doped with dopants of a first polarity. The transistor also includes a gate layer formed over and around a first end of …
- Who is the assignee on this patent?
- Globalfoundries Sg Pte Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D84/0158. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 09 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).