Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects
US-8936682-B2 · Jan 20, 2015 · US
Manufacturing method of silicon carbide single crystal
US9051663B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9051663-B2 |
| Application number | US-201113305019-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 28, 2011 |
| Priority date | Nov 29, 2010 |
| Publication date | Jun 9, 2015 |
| Grant date | Jun 9, 2015 |
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Abstract
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A manufacturing method of a SiC single crystal includes a first growth process and a re-growth process. In the first growth process, a first seed crystal made of SiC is used to grow a first SiC single crystal. In the re-growth process, a plurality of growth steps is performed for (n−1) times. In a k-th growth step, a k-th seed crystal is cut out from a grown (k−1)-th SiC single crystal, and the k-th seed crystal is used to grow a k-th SiC single crystal (n≧2 and 2≦k≦n). When an offset angle of a growth surface of the k-th seed crystal is defined as θ k , at least in one of the plurality of growth steps, the offset angle θ k is smaller than the offset angle θ k-1 .
First claim
Opening claim text (preview).
What is claimed is: 1. A manufacturing method of a SiC single crystal comprising: a first growth process in which a first seed crystal made of SiC is used to grow a first SiC single crystal; and a re-growth process in which a plurality of growth steps are performed for (n−1) times, in a k-th growth step, a k-th seed crystal is cut out from a grown (k−1)-th SiC single crystal, and the k-th seed crystal is used to grow a k-th SiC single crystal, wherein the n is natural number a…
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Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- C30B29/36Primary
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
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- What does patent US9051663B2 cover?
- A manufacturing method of a SiC single crystal includes a first growth process and a re-growth process. In the first growth process, a first seed crystal made of SiC is used to grow a first SiC single crystal. In the re-growth process, a plurality of growth steps is performed for (n−1) times. In a k-th growth step, a k-th seed crystal is cut out from a grown (k−1)-th SiC single crystal, and the…
- Who is the assignee on this patent?
- Urakami Yasushi, Adachi Ayumu, Gunjishima Itaru, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C30B29/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 09 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).