Pvt-method and device for producing single crystals in a safe manner with regard to the process
US-2024376633-A1 · Nov 14, 2024 · US
Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects
US8936682B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8936682-B2 |
| Application number | US-201113210513-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2011 |
| Priority date | Aug 26, 2010 |
| Publication date | Jan 20, 2015 |
| Grant date | Jan 20, 2015 |
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Abstract
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A manufacturing method of a SiC single crystal includes growing a SiC single crystal on a surface of a SiC seed crystal, which satisfies following conditions: (i) the SiC seed crystal includes a main growth surface composed of a plurality of sub-growth surfaces; (ii) among directions from an uppermost portion of a {0001} plane on the main growth surface to portions on a periphery of the main growth surface, the SiC seed crystal has a main direction in which a plurality of sub-growth surfaces is arranged; and (iii) an offset angle θ k of a k-th sub-growth surface and an offset angle θ k+1 of a (k+1)-th sub-growth surface satisfy a relationship of θ k <θ k+1 .
First claim
Opening claim text (preview).
What is claimed is: 1. A manufacturing method of a SiC single crystal comprising growing a SiC single crystal on a surface of a SiC seed crystal, wherein the SiC seed crystal satisfies following conditions (i) to (iii): (i) the SiC seed crystal includes a main growth surface composed of a plurality of sub-growth surfaces and the main grown surface is an exposed surface of the SiC single crystal whose normal vector has a component in a crucible central axis raw material directi…
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Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- C30B29/36Primary
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
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- What does patent US8936682B2 cover?
- A manufacturing method of a SiC single crystal includes growing a SiC single crystal on a surface of a SiC seed crystal, which satisfies following conditions: (i) the SiC seed crystal includes a main growth surface composed of a plurality of sub-growth surfaces; (ii) among directions from an uppermost portion of a {0001} plane on the main growth surface to portions on a periphery of the main gr…
- Who is the assignee on this patent?
- Urakami Yasushi, Gunjishima Itaru, Adachi Ayumu, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification C30B29/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).