Multicathode deposition system and methods
US-12051576-B2 · Jul 30, 2024 · US
Method for forming thin film while providing cooling gas to rear surface of substrate
US9045819B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9045819-B2 |
| Application number | US-200913132023-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 10, 2009 |
| Priority date | Dec 10, 2008 |
| Publication date | Jun 2, 2015 |
| Grant date | Jun 2, 2015 |
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Abstract
Official abstract text for this publication.
Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrate 21 is provided in a vacuum, and the cooling body 1 is provided close to a film non-formation surface of the substrate 21 . A thin film is formed by depositing a film forming material on a film formation surface of the substrate 21 while introducing a cooling gas into between the substrate 21 and the cooling body 1 . At this time, a gas which reacts with the film forming material is introduced as the cooling gas.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for depositing a film forming material in a vacuum on a substrate having a front surface and a rear surface to form a film, the method comprising: a first film forming step of forming a first layer of the film on the front surface of the substrate; a first cooling step of cooling down the substrate by introducing a first cooling gas to the rear surface during the first film forming step; a second film forming step of forming a second layer…
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Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- C23C14/042Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US9045819B2 cover?
- Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrate 21 is provided in a vacuum, and the cooling body 1 is provided close to a film non-formation surface of the substrate 21 . A thin film is formed by depositing a film forming material on a film formation surface of the substrate 21 while introducin…
- Who is the assignee on this patent?
- Honda Kazuyoshi, Shinokawa Yasuharu, Yagi Hiromasa, and 5 more
- What technology area does this patent fall under?
- Primary CPC classification C23C14/042. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 02 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).