Single-sided access device and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-9041099-B2
Application number	US-201113084533-A
Country	US
Kind code	B2
Filing date	Apr 11, 2011
Priority date	Apr 11, 2011
Publication date	May 26, 2015
Grant date	May 26, 2015

Abstract

The present invention provides a single-sided access device including an active fin structure comprising a source region and a drain region; an insulating layer interposed between the source region and the drain region; a trench isolation structure disposed at one side of the active fin structure; a single-sided sidewall gate electrode disposed on the other side of the active fin structure opposite to the trench isolation structure so that the active fin structure is sandwiched by trench isolation structure and the single-sided sidewall gate electrode; and a gate protrusion laterally and electrically extended from the single-sided sidewall gate electrode and embedded between the source region and the drain region under the insulating layer.

First claim

What is claimed is:

1. A single-sided access device, comprising:
an active fin structure of a substrate, the active fin structure comprising a source region and a drain region, wherein the active fin structure has a longitudinal direction that is parallel to a top surface of the substrate;
an insulating layer interposed between the source region and the drain region and embedded in the active fin structure;
a trench isolation structure disposed at one side of the active fin structure;
a sidewall gate electrode extending along the longitudinal direction on the other side of the active fin structure and being opposite to the trench isolation structure so that the active fin structure is sandwiched by trench isolation structure and the sidewall gate electrode; and
a gate protrusion laterally and electrically extended from the sidewall gate electrode and embedded under the insulating layer between the source region and the drain region, wherein the gate protrusion penetrating through entire thickness of the active fin structure and is in direct contact with the trench isolation structure.

2. The single-sided access device according to claim 1 , wherein the gate protrusion is integrally formed with the single-sided sidewall gate electrode.

3. The single-sided access device according to claim 1 further comprising a U-shaped channel between the source region and the drain region.

4. The single-sided access device according to claim 1 further comprising a first gate dielectric layer between the single sidewall gate electrode and the active fin structure.

5. The single-sided access device according to claim 4 further comprising a second gate dielectric layer between the gate protrusion and the active fin structure.

6. The single-sided access device according to claim 1 , wherein the insulating layer comprises high-density plasma chemical vapor deposition (HDPCVD) oxide.

7. The single-sided access device according to claim 1 , wherein the single-sided sidewall gate electrode extends along a first direction.

8. The single-sided access device according to claim 7 , wherein the trench isolation structure is a line-shaped isolation structure and extends along the first direction.

9. The single-sided access device according to claim 7 , wherein the gate protrusion extends along a second direction that is not parallel with the first direction.

10. The single-sided access device according to claim 9 , wherein the first direction is substantially perpendicular to the second direction.

11. A DRAM array, comprising:
a substrate;
an array of access devices in the substrate, each of the access devices comprising:
an active fin structure comprising a source region and a drain region, wherein the active fin structure has a longitudinal direction that is parallel to a top surface of the substrate;
an insulating layer interposed between the source region and the drain region and embedded in the active fin structure;
a trench isolation structure disposed at one side of the active fin structure;
a sidewall gate electrode extending along the longitudinal direction on the other side of the active fin structure and being opposite to the trench isolation structure so that the active fin structure is sandwiched by trench isolation structure and the sidewall gate electrode; and
a gate protrusion laterally and electrically extended from the sidewall gate electrode and embedded under the insulating layer between the source region and the drain region, wherein the gate protrusion extends penetrating through entire thickness of the active fin structure and is in direct contact with the trench isolation structure.

12. The DRAM array according to claim 11 , wherein the gate protrusion is integrally formed with the single-sided sidewall gate electrode.

13. The DRAM array e according to claim 11 further comprising a U-shaped channel between the source region and the drain region.

14. The DRAM array according to claim 11 further comprising a first gate dielectric layer between the single sidewall gate electrode and the active fin structure.

15. The DRAM array according to claim 11 further comprising a second gate dielectric layer between the gate protrusion and the active fin structure.

16. The DRAM array according to claim 11 , wherein the insulating layer comprises high-density plasma chemical vapor deposition (HDPCVD) oxide.

17. The DRAM array according to claim 11 , wherein the single-sided sidewall gate electrode extends along a first direction.

18. The DRAM array according to claim 17 , wherein the trench isolation structure is a line-shaped isolation structure and extends along the first direction.

19. The DRAM array according to claim 17 , wherein the gate protrusion extends along a second direction that is substantially perpendicular to the first direction.

20. The DRAM array according to claim 11 comprising two mirror symmetrical single-gate fin field-effect-transistors arranged in two adjacent columns and in the same row of the DRAM array.

Assignees

• Surthi Shyam
• Yang Sheng-Wei
• Nanya Technology Corp

Inventors

• Surthi Shyam
• Yang Sheng-Wei

Classifications

• H10D30/62

  Fin field-effect transistors [FinFET] · CPC title

• H10D30/024 Primary

  of fin field-effect transistors [FinFET] · CPC title

• H10D64/517

  characterised by the conducting layers · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D62/292

  Non-planar channels of IGFETs (resulting from the gate electrode dispositions, e.g. within trenches H10D64/512) · CPC title