Memory Device Having Oxygen Control Layers And Manufacturing Method Of Same
US-2015372228-A1 · Dec 24, 2015 · US
US9040950B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040950-B2 |
| Application number | US-201113225926-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2011 |
| Priority date | Sep 16, 2010 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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According to one embodiment, a nonvolatile memory device includes a first interconnect, an insulating layer, a needle-like metal oxide, and a second interconnect. The insulating layer is provided on the first interconnect. The needle-like metal oxide pierces the insulating layer in a vertical direction. The second interconnect is provided on the insulating layer.
Opening claim text (preview).
What is claimed is: 1. A nonvolatile memory device, comprising: a first interconnect; an insulating layer provided on the first interconnect; a needle-like metal oxide piercing the insulating layer to extend throughout an entire thickness of the insulating layer in a vertical direction; and a second interconnect provided on the insulating layer; wherein the insulating layer is formed of an oxide, and an absolute value of a change of a Gibbs free energy per mole of oxyg…
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