Use of quartz plates during growth of single crystal silicon ingots
US-12146236-B2 · Nov 19, 2024 · US
Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting
US9040010B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040010-B2 |
| Application number | US-201113267490-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 6, 2011 |
| Priority date | May 12, 2011 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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Abstract
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The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.
First claim
Opening claim text (preview).
What is claimed is: 1. An apparatus for manufacturing a single crystal silicon ingot, the apparatus comprising: a dual crucible configured to melt raw silicon charged into the dual crucible; a crucible heater configured to heat the dual crucible to melt the raw silicon into molten silicon; a crucible drive unit configured to control rotation and elevation of the dual crucible; and a pull-up drive unit disposed above the dual crucible, and configured to pull up a seed crysta…
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Cross-Sectional Technologies · mapped topic
Chemistry & Metallurgy · mapped topic
Cross-Sectional Technologies · mapped topic
- C30B29/06Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US9040010B2 cover?
- The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit …
- Who is the assignee on this patent?
- Lee Jin-Seok, Jang Bo-Yun, Ahn Young-Soo, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification C30B29/06. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 26 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).