Film forming method using plasma

Patent metadata

Field	Value
Publication number	US-9034774-B2
Application number	US-201214113134-A
Country	US
Kind code	B2
Filing date	Apr 23, 2012
Priority date	Apr 25, 2011
Publication date	May 19, 2015
Grant date	May 19, 2015

Abstract

This film forming method comprises: a first material gas supply step (A) wherein a first raw material gas is supplied over the substrate to be processed so that a first chemical adsorption layer, which is adsorbed on the substrate by means of the first raw material gas is formed on the substrate to be processed, a second material gas supply step (C) wherein a second raw material that is different from the first raw material gas is supplied over the substrate, on which the first chemical adsorption layer has been formed, so that a second chemical adsorption layer, which is adsorbed by means of the second raw material gas, is formed on the first chemical adsorption layer; and a plasma processing step (E) wherein a plasma processing is carried on at least the first and second chemical adsorption layers using microwave plasma.

First claim

What is claimed is:

1. A method of forming a film on a substrate to be processed, the method comprising:
supplying a first raw material gas over the substrate so that a first chemical adsorption layer that is adsorbed on the substrate by means of the first raw material gas is formed on the substrate;
supplying a second raw material that is different from the first raw material gas over the substrate on which the first chemical adsorption layer is formed so that a second chemical adsorption layer that is adsorbed by means of the second raw material gas is formed on the first chemical adsorption layer; and
carrying out a plasma processing on at least the first and second chemical adsorption layers using microwave plasma,
wherein the supplying the first raw material gas includes supplying a gas including Si 2 Cl 6 (hexachlorodisilane), and
the supplying the second raw material gas includes supplying a gas including SiH 4 (silane) having hydrogen bonds.

2. The method of claim 1 , further comprising:
exhausting the first raw material gas after the supplying the first raw material gas and prior to the supplying the second raw material gas.

3. The method of claim 1 , further comprising:
exhausting the second raw material gas after the supplying the second raw material gas.

4. The method of claim 1 , wherein the supplying the first raw material gas includes supplying a gas that contains a halogenide.

5. The method of claim 1 , wherein the microwave plasma is generated by a radial line slot antenna.

6. The method of claim 1 , wherein the plasma processing uses microwave plasma that has an electron temperature lower than 1.5 eV and an electron density higher than 1×10 11 cm −3 in the vicinity of a surface of the substrate.

7. The method of claim 1 , wherein the film formed on the substrate is a nitride film or an oxide film.

Assignees

• Tanaka Kouji
• Ueda Hirokazu
• Tokyo Electron Ltd

Inventors

• Tanaka Kouji
• Ueda Hirokazu

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6682 Primary

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title