Resonant body high electron mobility transistor
US-2015364669-A1 · Dec 17, 2015 · US
US9032795B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9032795-B2 |
| Application number | US-201113519451-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 4, 2011 |
| Priority date | Apr 8, 2011 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
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A microelectromechanical system (MEMS) resonator, a sensor having the same and a method for manufacturing the MEMS resonator are provided. The MEMS resonator includes a base substrate of the MEMS resonator, the base substrate having a recess portion recessed into one surface thereof, an oscillator mounted at the base substrate and at least partially overlapping the recess portion to be vibrated using an empty space of the recess portion, and a wire connected to the oscillator and the base substrate, respectively, to control a natural frequency of the MEMS resonator by supporting at least part of the oscillator. Accordingly, the natural frequency of the resonator can be easily controlled.
Opening claim text (preview).
The invention claimed is: 1. A microelectromechanical system (MEMS) resonator comprising: a base substrate of the MEMS resonator, the base substrate having a recess portion concaved from one surface thereof; an oscillator mounted at the base substrate and at least partially overlapping the recess portion to be vibrated within an empty space of the recess portion; a wire connected to the oscillator and the base substrate, respectively, to control a natural frequency of the MEMS resonator by supporting at least part of the oscillator; and a thin film deposited on the surface of the base substrate, wherein the oscillator extends from the thin film and is positioned in the same plane of the thin film. 2. The resonator of claim 1 , wherein a first metal layer is formed on a surface of the thin film and a second metal layer is formed on a surface of the oscillator, wherein the wire allows the first and second metal layers to be connected to each other. 3. The resonator of claim 2 , wherein the wire is formed by dielectrophoresis using the first and second metal layers as electrodes. 4. The resonator of claim 3 , wherein the wire contains nanoparticles, the nanoparticles being stuck onto the first and second metal layers by the dielectrophoresis. 5. The resonator of claim 2 , wherein the first and second metal layers are disposed at structures, the structures protruding from the thin film and the oscillator, respectively, into the empty space. 6. The resonator of claim 2 , wherein the first and second metal layers are disposed to face each other. 7. The resonator of claim 2 , wherein the wire is cut when a voltage is applied to the first metal layer and the second metal layer, respectively. 8. The resonator of claim 1 , wherein the oscillator is implemented as a cantilever having a fixed end connected to the base substrate and a free end extending from the recess portion, or implemented as a fixed beam having both ends connected to the base substrate by crossing the recess portion. 9. A sensor comprising: a sensor main body; a microelectromechanical system (MEMS) resonator mounted in the main body, having an oscillator, and configured according to claim 1 ; and a controller configured to detect a displacement of the oscillator to thus measure an acceleration or an angular rate.
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