Methods of forming epitaxial structures

Patent metadata

Field	Value
Publication number	US-9029246-B2
Application number	US-201313954659-A
Country	US
Kind code	B2
Filing date	Jul 30, 2013
Priority date	Jul 30, 2013
Publication date	May 12, 2015
Grant date	May 12, 2015

Abstract

An embodiment is a method. A first III-V compound semiconductor is epitaxially grown in a trench on a substrate, and the epitaxial growth is performed in a chamber. The first III-V compound semiconductor has a first surface comprising a facet. After the epitaxial growth, the first surface of the first III-V compound semiconductor is etched to form an altered surface of the first III-V compound semiconductor. Etching the first surface is performed in the chamber in situ. A second III-V compound semiconductor is epitaxially grown on the altered surface of the first III-V compound semiconductor. The epitaxial growth of the first III-V compound semiconductor may be performed in a MOCVD chamber, and the etch may use an HCl gas. Structures resulting from methods are also disclosed.

First claim

What is claimed is:

1. A method comprising:
forming substrate with a trench, the trench being defined by an isolation region;
epitaxially growing a first III-V compound semiconductor in the trench, the first III-V compound semiconductor having a first surface;
etching the first surface of the first III-V compound semiconductor to form a modified surface of the first III-V compound semiconductor, the modified surface being below an upper portion of the isolation region; and
e…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Chen Meng-Ku
• Lin Hung-Ta
• Tsai Pang-Yen
• Chang Huicheng

Classifications

• H10W10/17

  Electricity · mapped topic

• H10W10/014 Primary

  Electricity · mapped topic

• H10P14/20 Primary

  Electricity · mapped topic

• H10D62/125

  Electricity · mapped topic

• H10D62/115

  Electricity · mapped topic