Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture

US9024328B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9024328-B2
Application numberUS-201313934053-A
CountryUS
Kind codeB2
Filing dateJul 2, 2013
Priority dateJul 2, 2013
Publication dateMay 5, 2015
Grant dateMay 5, 2015

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  2. Abstract

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Abstract

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A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the channel region is disposed in a particular crystallographic plane of the SiC drift layer.

First claim

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The invention claimed is: 1. A semiconductor device, comprising: a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate, wherein the SiC drift layer comprises a non-planar surface comprising a plurality of repeating trench features that are oriented parallel to a length of a channel of the semiconductor device, and wherein the channel is disposed in a particular crystallographic plane of the SiC drift layer. 2. The device of claim 1…

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What does patent US9024328B2 cover?
A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the channel region is disposed in a particular crystallographic plane of the SiC drift layer.
Who is the assignee on this patent?
Gen Electric
What technology area does this patent fall under?
Primary CPC classification H10D64/257. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 05 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).