Transistor with source manifold in non-active die region
US-2024339409-A1 · Oct 10, 2024 · US
US9024328B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9024328-B2 |
| Application number | US-201313934053-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 2, 2013 |
| Priority date | Jul 2, 2013 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
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A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the channel region is disposed in a particular crystallographic plane of the SiC drift layer.
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device, comprising: a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate, wherein the SiC drift layer comprises a non-planar surface comprising a plurality of repeating trench features that are oriented parallel to a length of a channel of the semiconductor device, and wherein the channel is disposed in a particular crystallographic plane of the SiC drift layer. 2. The device of claim 1…
Electricity · mapped topic
Electricity · mapped topic
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