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Method of programming a non-volatile resistive memory
US9019749B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9019749-B2 |
| Application number | US-201414175292-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 7, 2014 |
| Priority date | Feb 8, 2013 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Abstract
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The invention relates to a method for pre-programming a matrix of resistive non-volatile memory cells, with said memory cells comprising a dielectric material positioned between two conducting electrodes, with said memory cells being initially in an original resistive state (original HRS) and the dielectric material being able to be so electrically modified as to bring the memory cell from the original resistive state (original HRS) to at least another resistive state (LRS, programmed HRS) wherein the resistance of the memory cell is at least twice and preferably at least ten times lower than the resistance of the memory cell in the original resistive state (original HRS), at least for a reading voltage interval, characterized in that the method comprises the following steps: prior to mounting a component containing said matrix on a support, programming the matrix by electrically bringing a plurality of cells from the original resistive state (original HRS) to said other resistive state (LRS, programmed HRS), leaving the other memory cells in the original resistive state (original HRS) thereof; mounting said matrix on a support, with the step of mounting comprising at least one of the following steps: a step of brazing, a step of welding.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for pre-programming a matrix of resistive non-volatile memory cells, with said memory cells comprising a dielectric material positioned between two conducting electrodes, with said memory cells being initially in an original resistive state (original HRS) and the dielectric material being able to be so electrically modified as to bring the memory cell from the original resistive state (original HRS) to at least another resistive state (LRS, pro…
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Physics · mapped topic
- G11C13/0069Primary
Physics · mapped topic
Physics · mapped topic
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- What does patent US9019749B2 cover?
- The invention relates to a method for pre-programming a matrix of resistive non-volatile memory cells, with said memory cells comprising a dielectric material positioned between two conducting electrodes, with said memory cells being initially in an original resistive state (original HRS) and the dielectric material being able to be so electrically modified as to bring the memory cell from the …
- Who is the assignee on this patent?
- Commissariat Energie Atomique, Commissariat Energie Atomique
- What technology area does this patent fall under?
- Primary CPC classification G11C13/0069. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).