Memory with fly-bitlines that work with single-ended sensing and associated memory access method
US-2024233786-A9 · Jul 11, 2024 · US
Memory and method of operating the same
US9019740B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9019740-B2 |
| Application number | US-201213680547-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 19, 2012 |
| Priority date | Feb 28, 2012 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Abstract
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A memory includes an array of memory cells including a plurality of memory cells with a common source, wherein each of the plurality of memory cells with a common source includes two sub-memory cells, each of the sub-memory cells corresponds to a bit line, and the respective bits are electrically independent. Each of the sub-memory cells in the memory according to the disclosure corresponds to a bit line, and the respective bit lines are electrically independent, thereby effectively avoiding interference to other memory cells which will not be programmed during a program operation.
First claim
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What is claimed is: 1. A memory, comprising an array of memory cells including a plurality of memory cells with a common source, wherein each of the plurality of memory cells with a common source includes two sub-memory cells, each of the sub-memory cells corresponds to a bit line, and the respective bit lines are electrically independent, and wherein each sub-memory cell comprises a diffusion area, and two adjacent sub-memory cells of two adjacent memory cells in the direction of…
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Frequently asked questions
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- What does patent US9019740B2 cover?
- A memory includes an array of memory cells including a plurality of memory cells with a common source, wherein each of the plurality of memory cells with a common source includes two sub-memory cells, each of the sub-memory cells corresponds to a bit line, and the respective bits are electrically independent. Each of the sub-memory cells in the memory according to the disclosure corresponds to …
- Who is the assignee on this patent?
- Grace Semiconductor Mfg Corp, Shanghai Huahong Grace Semiconductor Mfg Corp
- What technology area does this patent fall under?
- Primary CPC classification G11C7/18. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).