Memory detection method, computer device and storage medium
US-11929108-B2 · Mar 12, 2024 · US
US9018969B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9018969-B2 |
| Application number | US-201213608138-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 10, 2012 |
| Priority date | Sep 27, 2011 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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In a semiconductor device in which semiconductor chips having a number of signal TSVs are stacked, a huge amount of man-hours have been required to perform a continuity test for each of the signal TSVs. According to the present invention, no continuity test is performed directly on signal TSVs. Dummy bumps are arranged in addition to signal TSVs. The dummy bumps of the semiconductor chips are connected through a conduction path that can pass the dummy bumps between the semiconductor chips with one stroke when the semiconductor chips are stacked. A continuity test of the conduction path allows a bonding defect on bonded surfaces of two of the stacked semiconductor chips to be measured and detected.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first chip including a first plurality of first bumps on a first surface and a plurality of first wirings; and a second chip including a plurality of second bumps and a plurality of second wirings, and being stacked with the first chip such that each of the plurality of second bumps is coupled to a corresponding one of the first plurality of first bumps of the first chip; wherein the first wirings, the first bumps, th…
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