Photoresist defect reduction system and method

Patent metadata

Field	Value
Publication number	US-9017934-B2
Application number	US-201313790057-A
Country	US
Kind code	B2
Filing date	Mar 8, 2013
Priority date	Mar 8, 2013
Publication date	Apr 28, 2015
Grant date	Apr 28, 2015

Abstract

A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
developing a photoresist over a substrate;
cleaning the photoresist after the developing, the cleaning the photoresist comprising applying an alkaline environment to a surface of the photoresist to modify the surface of the photoresist to have a first charge and to modify a surface of residue to have the first charge; and
after the cleaning the photoresist, rinsing the photoresist w…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Wang Wen-Yun
• Chang Ching-Yu

Classifications

• G03F7/40 Primary

  Physics · mapped topic

• G03F7/405 Primary

  Physics · mapped topic

• G03F7/425 Primary

  Physics · mapped topic