Semiconductor device including FinFET device

US9012995B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9012995-B2
Application numberUS-201314047044-A
CountryUS
Kind codeB2
Filing dateOct 7, 2013
Priority dateApr 11, 2007
Publication dateApr 21, 2015
Grant dateApr 21, 2015

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  2. Abstract

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  5. First independent claim

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Abstract

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A memory element includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.

First claim

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What is claimed is: 1. An apparatus, comprising, comprising: a memory element having two terminals; a source line, extending in a first direction above the surface of a substrate; a pair of fins, extending in parallel in a second direction above the surface of the substrate, each of the fins being partially wrapped around by the source line; a local interconnect extending in the first direction above the surface of the substrate, contacting one terminal of the memory element…

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What does patent US9012995B2 cover?
A memory element includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
Who is the assignee on this patent?
Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification H10D86/01. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).