Selective etching of silicon wafer
US-2015357207-A1 · Dec 10, 2015 · US
Etching polysilicon
US9012318B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012318-B2 |
| Application number | US-201213624272-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 21, 2012 |
| Priority date | Sep 21, 2012 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.
First claim
Opening claim text (preview).
What is claimed is: 1. A method, comprising: exposing polysilicon to an aqueous composition comprising nitric acid, poly-carboxylic acid and ammonium fluoride; wherein the aqueous composition comprises a water content of less than 39 wt %. 2. The method of claim 1 , further comprising exposing the polysilicon to the aqueous composition, wherein the aqueous composition comprises a water content of less than or equal to 35 wt %. 3. The me…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9012318B2 cover?
- Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.
- Who is the assignee on this patent?
- Imonigie Jerome A, Raghu Prashant, Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification C09K13/08. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).