Heterojunction bipolar transistor having a germanium raised extrinsic base
US-9209264-B2 · Dec 8, 2015 · US
Bipolar transistor with embedded epitaxial external base region and method of forming the same
US9012291B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012291-B2 |
| Application number | US-201414335468-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 18, 2014 |
| Priority date | May 16, 2012 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
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The present invention discloses a bipolar transistor with an embedded epitaxial external base region, which is designed to solve the problem of the TED effect with the prior art structures. The bipolar transistor with an embedded epitaxial external base region of the present invention comprises at least a collector region, a base region and an external base region on the collector region, an emitter on the base region, and sidewalls at both sides of the emitter. The external base region is grown through an in-situ doping selective epitaxy process and is embedded in the collector region. A portion of the external base region is located beneath the sidewalls. The present invention discloses a method of forming a bipolar transistor with an embedded epitaxial external base region. The bipolar transistor with an embedded epitaxial external base region of the present invention avoids the TED effect and reduces the resistance of the external base region of the device so that the performance of the device is improved. The method of forming a bipolar transistor with an embedded epitaxial external base region of the present invention achieves the aforesaid bipolar transistor with an embedded epitaxial external base region, and features concise steps, a low cost and simple operations, and the structure obtained has good performance.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a bipolar transistor with an embedded epitaxial external base region, comprising at least the following steps: 3.1 forming a collector region of a first doping type; 3.2 forming a base region of a second doping type on the resulting structure of the step 3.1; 3.3 depositing a first dielectric layer on the base region; 3.4 opening a window in the first dielectric layer; 3.5 forming a polycrystalline layer of the first doping type a…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9012291B2 cover?
- The present invention discloses a bipolar transistor with an embedded epitaxial external base region, which is designed to solve the problem of the TED effect with the prior art structures. The bipolar transistor with an embedded epitaxial external base region of the present invention comprises at least a collector region, a base region and an external base region on the collector region, an em…
- Who is the assignee on this patent?
- Univ Tsinghua
- What technology area does this patent fall under?
- Primary CPC classification H10D10/021. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).