Heterojunction bipolar transistor having a germanium raised extrinsic base
US-9209264-B2 · Dec 8, 2015 · US
Base profile of self-aligned bipolar transistors for power amplifier applications
US9105677B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105677-B2 |
| Application number | US-201314059531-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 22, 2013 |
| Priority date | Oct 22, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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According to a bipolar transistor structure having a transistor top and a transistor bottom herein, a silicon substrate located at the transistor bottom has a collector region of a first conductivity type. An epitaxial base layer of a second conductivity type overlies, relative to the transistor top and bottom, a portion of the collector region. The epitaxial base layer has a bottom surface on the silicon substrate and a top surface opposite the bottom surface. A top region, relative to the transistor top and bottom, of the epitaxial base layer comprises a concentration of germanium having atomic compositions sufficient to avoid impacting transistor parameters, and sufficient to be resistant to selective chemical etching. A silicon emitter layer of the first conductivity type overlies, relative to the transistor top and bottom, a portion of the epitaxial base layer adjacent to the top surface of the epitaxial base layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A bipolar transistor structure having a transistor top and a transistor bottom, said structure comprising: a silicon substrate located at said transistor bottom and having a collector region of a first conductivity type; an epitaxial base layer of a second conductivity type overlying, relative to said transistor top and said transistor bottom, a portion of said collector region, said epitaxial base layer having a bottom surface contacting said silicon subs…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105677B2 cover?
- According to a bipolar transistor structure having a transistor top and a transistor bottom herein, a silicon substrate located at the transistor bottom has a collector region of a first conductivity type. An epitaxial base layer of a second conductivity type overlies, relative to the transistor top and bottom, a portion of the collector region. The epitaxial base layer has a bottom surface on …
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D10/021. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).