Electronic device based on multilayer thin film and method for manufacturing the same using a three-dimensional structure
US-2024309503-A1 · Sep 19, 2024 · US
US9012273B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012273-B2 |
| Application number | US-201414163873-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 24, 2014 |
| Priority date | Jun 7, 2010 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a flat panel display device, the method comprising: preparing a substrate on which pixel areas are defined, the pixel areas comprising a thin film transistor (TFT) area and a storage capacitor area; forming an active layer on the TFT area of the substrate; forming a gate line extending in a first direction on the substrate, a gate electrode located in the TFT area, and a first storage electrode in the storage capacitor area; f…
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.