Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate
US8999852B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999852-B2 |
| Application number | US-201213712806-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 12, 2012 |
| Priority date | Dec 12, 2012 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Abstract
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A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of forming a pattern on a substrate, comprising: forming cylinder-like structures projecting longitudinally outward of a base, the cylinder-like structures being spaced from one another and individually comprising an upwardly-open cylinder-like chamber; and forming a sidewall lining over inner and over outer sidewalls of the cylinder-like structures and that form interstitial spaces laterally outward of the cylinder-like structures, the inte…
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- H10P76/4085Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8999852B2 cover?
- A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longi…
- Who is the assignee on this patent?
- Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P76/4085. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).