Method of forming fine patterns of semiconductor device

Patent metadata

Field	Value
Publication number	US-8999840-B2
Application number	US-201313939664-A
Country	US
Kind code	B2
Filing date	Jul 11, 2013
Priority date	Jul 11, 2013
Publication date	Apr 7, 2015
Grant date	Apr 7, 2015

Abstract

A method of forming a micro pattern of a semiconductor device may include forming an acid-extinguisher containing film on a substrate, forming a photoresist film containing a potential acid on the acid-extinguisher containing film, forming an exposed area containing acids by exposing a portion of the photoresist film to light, forming an insoluble polymer thin film between the acid-extinguisher containing film and the exposed area by extinguishing the acids of the exposed area at an interface between the acid-extinguisher containing film and the exposed area, developing the photoresist film to form a space exposing the insoluble polymer thin film in the exposed area and a photoresist pattern integrally connected to the insoluble polymer thin film, exposing the acid-extinguisher containing film through the space by removing the insoluble polymer thin film, and removing the acid-extinguisher containing film exposed through the space.

First claim

What is claimed is:

1. A method of forming a micro pattern of a semiconductor device, the method comprising:
forming an acid-extinguisher containing film on a substrate;
forming a photoresist film on the acid-extinguisher containing film, the photoresist film containing a potential acid;
forming an exposed area by exposing a portion of the photoresist film to light, the exposed area containing acids;
forming an insoluble polymer thin film between the acid-extinguisher containing film and the exposed area by extinguishing the acids of the exposed area at an interface between the acid-extinguisher containing film and the exposed area;
developing the photoresist film to form a space exposing the insoluble polymer thin film in the exposed area and a photoresist pattern integrally connected to the insoluble polymer thin film;
exposing the acid-extinguisher containing film through the space by removing the insoluble polymer thin film; and
removing the acid-extinguisher containing film exposed through the space.

2. The method of claim 1 , further comprising:
washing a surface of the insoluble polymer thin film and a surface of the photoresist pattern before the exposing the acid-extinguisher containing film and after the developing the photoresist film.

3. The method of claim 2 , further comprising:
drying the washed insoluble polymer thin film and the washed photoresist pattern before the exposing the acid-extinguisher containing film and after the washing a surface of the insoluble polymer thin film and a surface of the photoresist pattern.

4. The method of claim 1 , wherein the forming a photoresist film forms the photoresist film containing the potential acid including one of a photoacid generator (PAG), a thermoacid generator (TAG), and a mixture thereof.

5. The method of claim 1 , wherein the forming an acid-extinguisher containing film includes forming the acid-extinguisher containing film including a basic material.

6. The method of claim 1 , wherein the forming an acid-extinguisher containing film includes forming the acid-extinguisher containing film including a basic material having a boiling point higher than 120° C.

7. The method of claim 1 , wherein the forming an acid-extinguisher containing film includes applying a mixed solution of a basic material and a solvent onto the substrate.

8. The method of claim 7 , wherein the applying a mixed solution includes applying the mixed solution further containing a matrix polymer.

9. The method of claim 1 , wherein the forming an acid-extinguisher containing film includes supplying a gas-phase basic material onto the substrate.

10. The method of claim 1 , wherein the forming an acid-extinguisher containing film includes forming a basic material layer using one of an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, and a physical vapor deposition (PVD) process.

11. The method of claim 1 , wherein:
the forming an acid-extinguisher containing film includes forming the acid-extinguisher containing film including a basic material, and
the forming an insoluble polymer thin film includes extinguishing the acids of the exposed area by diffusing the basic material from the acid-extinguisher containing film to the exposed area.

12. A method of forming a micro pattern of a semiconductor device, the method comprising:
forming an acid-extinguisher containing film on a substrate including a portion to be etched;
forming a photoresist film on the acid-extinguisher containing film;
exposing a portion of the photoresist film to light;
forming an insoluble polymer thin film in the exposed portion of the photoresist film, the insoluble polymer thin film being in contact with the acid-extinguisher containing film;
forming a photoresist pattern integrally connected to the insoluble polymer thin film by developing the photoresist film;
exposing the acid-extinguisher containing film by etching the insoluble polymer thin film using the photoresist pattern as an etching mask;
exposing the portion of the substrate to be etched by etching the acid-extinguisher containing film using the photoresist pattern as an etching mask; and
etching the portion of the substrate to be etched using the photoresist pattern as an etching mask.

13. The method of claim 12 , wherein the exposing the acid-extinguisher containing film includes removing the insoluble polymer thin film using a dry etching process.

14. The method of claim 12 , wherein:
the exposing a portion of the photoresist film includes generating acids within the exposed portion of the photoresist film, and
the forming an insoluble polymer thin film includes extinguishing the acids within the exposed portion by diffusing an acid-extinguisher from the acid-extinguisher containing film to the exposed portion of the photoresist film.

15. The method of claim 12 , wherein the forming an acid-extinguisher containing film includes forming the acid-extinguisher containing film including a basic material, further comprising:
heating the photoresist film at a temperature lower than a boiling point of the basic material in the acid-extinguisher containing film before the exposing a portion of the photoresist film to light and after forming the photoresist film.

16. A method comprising:
forming a photoresist film on a lower film;
exposing a portion of the photoresist film to light;
forming an upper film in the exposed portion of the photoresist film such that the upper film is in contact with the lower film, the upper film being insoluble in an alkaline aqueous solution;
forming a photoresist pattern integrally connected to the upper film by developing the photoresist film; and
exposing the lower film by removing the upper film using the photoresist pattern as an etching mask.

17. The method of claim 16 , wherein the exposing the lower film includes removing the upper film using a dry etching process.

18. The method of claim 16 , wherein:
the exposing a portion of the photoresist film includes generating acids within the exposed portion of the photoresist film, and
the forming an upper film includes extinguishing the acids within the exposed portion by diffusing an acid-extinguisher from the upper film to the exposed portion of the photoresist film.

19. The method of claim 16 , further comprising:
washing a surface of the upper film and a surface of the photoresist pattern before the exposing the lower film and after the forming a photoresist pattern.

20. The method of claim 19 , further comprising:
drying the washed upper film and the washed photoresist pattern before the exposing the lower film and after the washing a surface of the upper thin film and a surface of the photoresist pattern.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Koh Cha-Won

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P70/23 Primary

  during, before or after processing of insulating materials · CPC title

• H10P50/696

  Process specially adapted to improve the resolution of the mask · CPC title