Semiconductor device fabricating method

Patent metadata

Field	Value
Publication number	US-8999814-B2
Application number	US-201414251086-A
Country	US
Kind code	B2
Filing date	Apr 11, 2014
Priority date	Apr 17, 2013
Publication date	Apr 7, 2015
Grant date	Apr 7, 2015

Abstract

A semiconductor device fabricating method includes forming device chip regions and a monitor chip region for processing management, on a substrate surface layer on one main surface side of a semiconductor substrate wafer, each device chip region having an active region and an edge region; after forming metal films on front surface of the device chip regions and the monitor chip region by vapor deposition and photolithography, forming protective films on the front surfaces of the device chip regions and monitor chip region; and grinding and polishing another main surface side of the semiconductor substrate wafer to thin the semiconductor substrate wafer. A difference between an area of one chip occupied by the protective film of the monitor chip region and an area of one chip occupied by the protective film of the device chip region is 20% or less.

First claim

What is claimed is:

1. A semiconductor device fabricating method, comprising:
a first step of forming device chip regions, and a monitor chip region for processing management including in a center thereof a sensing region, on a substrate surface layer in a region compartmentalized in lattice form on one main surface side of a semiconductor substrate wafer, each device chip region having a required active region and an edge region surrounding the active region;
a second step of,…

Assignees

• Fuji Electric Co Ltd

Inventors

• Shiigi Takashi

Classifications

• H10W72/5524

  Electricity · mapped topic

• H10W72/5363

  Electricity · mapped topic

• H10W72/952

  Electricity · mapped topic

• H10W72/59

  Electricity · mapped topic

• H10W72/075

  Electricity · mapped topic