Resistance variable memory cell structures and methods
US-9184377-B2 · Nov 10, 2015 · US
Method of forming RRAM structure
US8999733B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999733-B2 |
| Application number | US-201414525228-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 28, 2014 |
| Priority date | Jul 2, 2010 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the oxygen ions or nitrogen ions are removed from the vacancies to lower the resistance of the resistive layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a resistive random-access memory (RRAM) structure, comprising: forming a bottom electrode; forming a dielectric barrier layer on the bottom electrode; forming a dielectric middle layer on the dielectric barrier layer; forming a dielectric screen layer on the dielectric middle layer, wherein the dielectric barrier layer, the dielectric middle layer, and the dielectric screen layer are successively formed on the bottom electrode to th…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H01L45/165Primary
Electricity · mapped topic
- H10N70/24Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8999733B2 cover?
- An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the …
- Who is the assignee on this patent?
- Nanya Technology Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L45/165. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).