Chamber cleaning method

US8999068B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8999068-B2
Application numberUS-87345810-A
CountryUS
Kind codeB2
Filing dateSep 1, 2010
Priority dateSep 3, 2009
Publication dateApr 7, 2015
Grant dateApr 7, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O 2 gas and a F containing gas is supplied toward an outer periphery 24 a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24 a of the ESC 24 ; an O 2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24 a ; and the shoulder deposit 50 adhered to the outer periphery 24 a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24 a from being exposed to a F radical.

First claim

Opening claim text (preview).

What is claimed is: 1. A chamber cleaning method for removing a CF-based deposit containing at least one of Si and metal adhered to an outer periphery of a table-shaped electrostatic chuck which is installed in a chamber of a substrate processing apparatus configured to perform a plasma process on a substrate and is configured to mount the substrate thereon, the method comprising: supplying a mixed gas of an oxygen gas and a fluorine-containing gas toward the outer periphery of th…

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What does patent US8999068B2 cover?
Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O 2 gas and a F containing gas is supplied toward an outer periphery 24 a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the o…
Who is the assignee on this patent?
Honda Masanobu, Hanaoka Hidetoshi, Hirano Taichi, and 4 more
What technology area does this patent fall under?
Primary CPC classification H01J37/32862. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).