Defect scan and manufacture test

Patent metadata

Field	Value
Publication number	US-8996954-B2
Application number	US-201314054662-A
Country	US
Kind code	B2
Filing date	Oct 15, 2013
Priority date	Mar 31, 2010
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A method for detecting a defect in a portion of a storage device is disclosed. Reference data and data read from the portion are compared to determine a number of error bits and a number of error symbols. An error ratio is computed, wherein the error ratio comprises a ratio of the number of error bits to the number of error symbols. A defect is detected based on whether the error ratio exceeds a threshold. In some embodiments, the reference data and the read data are compared to determine an error vector, wherein a bit in the error vector with a value one indicates a bit error in the read data. For each of a plurality of windows of the error vector, a corresponding number of error bits is determined. A defect is detected based on whether any of the numbers of error bits exceeds a threshold.

First claim

What is claimed is:

1. A system for determining whether a portion of a storage device includes a defect, comprising:
a processor configured to:
read data from the portion of the storage device;
correct the read data using a decoder;
obtain reference data associated with the portion;
compare the reference data and the read data to determine a number of error bits and a number of error symbols associated with the portion;
compute an error ratio, wherein the error ratio comp…

Assignees

• Sk Hynix Memory Solutions Inc

Inventors

• Kou Yu
• Zeng Lingqi

Classifications

• G11C29/32 Primary

  Physics · mapped topic

• G06F11/076

  Physics · mapped topic

• G11C29/42 Primary

  Physics · mapped topic

• G11C29/44

  Physics · mapped topic

• H03M13/1102

  Electricity · mapped topic