Semiconductor system and device

US9219005B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9219005-B2
Application numberUS-201213623756-A
CountryUS
Kind codeB2
Filing dateSep 20, 2012
Priority dateJun 28, 2011
Publication dateDec 22, 2015
Grant dateDec 22, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A 3D IC based mobile system including: a first semiconductor layer including first mono-crystallized transistors, where the first mono-crystallized transistors are interconnected by at least one metal layer including aluminum or copper; a second layer including second mono-crystallized transistors and overlaying the at least one metal layer, where the at least one metal layer is in-between the first semiconductor layer and the second layer; a plurality of thermal paths between the second mono-crystallized transistors and a heat removal apparatus, where at least one of the plurality of thermal paths includes a thermal contact adapted to conduct heat and not conduct electricity; and a heat spreader layer between the second layer and the at least one metal layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A 3D IC based mobile system comprising: a first semiconductor layer comprising first mono-crystallized transistors, wherein said first mono-crystallized transistors are interconnected by at least one metal layer comprising aluminum or copper; a second layer comprising second mono-crystallized transistors and overlaying said at least one metal layer, wherein said at least one metal layer is in-between said first semiconductor layer and said second laye…

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What does patent US9219005B2 cover?
A 3D IC based mobile system including: a first semiconductor layer including first mono-crystallized transistors, where the first mono-crystallized transistors are interconnected by at least one metal layer including aluminum or copper; a second layer including second mono-crystallized transistors and overlaying the at least one metal layer, where the at least one metal layer is in-between the …
Who is the assignee on this patent?
Monolithic 3D Inc
What technology area does this patent fall under?
Primary CPC classification H10D84/85. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 22 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).