Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US9219005B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9219005-B2 |
| Application number | US-201213623756-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 20, 2012 |
| Priority date | Jun 28, 2011 |
| Publication date | Dec 22, 2015 |
| Grant date | Dec 22, 2015 |
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A 3D IC based mobile system including: a first semiconductor layer including first mono-crystallized transistors, where the first mono-crystallized transistors are interconnected by at least one metal layer including aluminum or copper; a second layer including second mono-crystallized transistors and overlaying the at least one metal layer, where the at least one metal layer is in-between the first semiconductor layer and the second layer; a plurality of thermal paths between the second mono-crystallized transistors and a heat removal apparatus, where at least one of the plurality of thermal paths includes a thermal contact adapted to conduct heat and not conduct electricity; and a heat spreader layer between the second layer and the at least one metal layer.
Opening claim text (preview).
What is claimed is: 1. A 3D IC based mobile system comprising: a first semiconductor layer comprising first mono-crystallized transistors, wherein said first mono-crystallized transistors are interconnected by at least one metal layer comprising aluminum or copper; a second layer comprising second mono-crystallized transistors and overlaying said at least one metal layer, wherein said at least one metal layer is in-between said first semiconductor layer and said second laye…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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