Mos capacitors for variable capacitor arrays and methods of forming the same
US-2016294366-A1 · Oct 6, 2016 · US
US8994446B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994446-B2 |
| Application number | US-201313930657-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2013 |
| Priority date | Jun 28, 2013 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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An integrated circuit includes a device of a first conductivity type formed in a first well; a voltage regulator configured to provide a bias voltage to the first well based on a first reference voltage which is generated using a first band gap reference generator; and a monitor circuit configured to compare a voltage of the first well to an upper limit and a lower limit of a first voltage range, wherein each of the upper limit and lower limit is provided using a second band gap reference generator, separate from the first band gap reference generator, wherein, in response to determining that the voltage of the first well is outside of the first voltage range, providing a first out of range indicator.
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What is claimed is: 1. An integrated circuit, comprising: a device of a first conductivity type formed in a first well; a voltage regulator configured to provide a bias voltage to the first well based on a first reference voltage which is generated using a first band gap reference generator; a monitor circuit configured to compare a voltage of the first well to an upper limit and a lower limit of a first voltage range, wherein each of the upper limit and lower limit is provide…
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