Supply voltage independent bandgap circuit
US-9218014-B2 · Dec 22, 2015 · US
Mos capacitors for variable capacitor arrays and methods of forming the same
US2016294366A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016294366-A1 |
| Application number | US-201615085572-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 30, 2016 |
| Priority date | Mar 30, 2015 |
| Publication date | Oct 6, 2016 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A capacitor structure is described. The capacitor structure includes a substrate, a plurality of source/drain regions formed in the substrate, and a plurality of gates formed above the substrate. The plurality of gates formed above the substrate such that each of the plurality of gates is formed between each pair of source/drain regions of the plurality of source/drain regions to form a channel between each pair of source/drain regions.
First claim
Opening claim text (preview).
What is claimed is: 1 . A capacitor structure comprising: a substrate; a plurality of source/drain regions formed in said substrate; and a plurality of gates formed above said substrate such that each of said plurality of gates is formed between each pair of source/drain regions of said plurality of source/drain regions to form a channel between said each pair of source/drain regions. 2 . The capacitor structure of claim 1 , wherein said substrate is…
Assignees
Inventors
Classifications
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2016294366A1 cover?
- A capacitor structure is described. The capacitor structure includes a substrate, a plurality of source/drain regions formed in the substrate, and a plurality of gates formed above the substrate. The plurality of gates formed above the substrate such that each of the plurality of gates is formed between each pair of source/drain regions of the plurality of source/drain regions to form a channel…
- Who is the assignee on this patent?
- Tdk Corp
- What technology area does this patent fall under?
- Primary CPC classification G05F3/24. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Thu Oct 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).