Transistors, methods of manufacturing thereof, and image sensor circuits with reduced RTS noise

Patent metadata

Field	Value
Publication number	US-8994082-B2
Application number	US-201113250856-A
Country	US
Kind code	B2
Filing date	Sep 30, 2011
Priority date	Sep 30, 2011
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

Transistors, methods of manufacturing thereof, and image sensor circuits with reduced random telegraph signal (RTS) noise are disclosed. In one embodiment, a transistor includes a channel disposed between two isolation regions in a workpiece. The channel has edge regions proximate the isolation regions and a central region between the edge regions. The transistor includes a gate dielectric disposed over the channel, and a gate disposed over the gate dielectric. The transistor includes a voltage threshold modification feature proximate the edge regions configured to increase a voltage threshold of the transistor proximate edge regions relative to the central region of the channel.

First claim

What is claimed is:

1. A transistor, comprising:
a channel disposed between two isolation regions laterally spaced apart by an uninterrupted portion of a semiconductor material in a workpiece, the channel comprising edge regions proximate the isolation regions and a central region between the edge regions;
a gate dielectric disposed over the channel and extending over a portion of the two isolation regions; and
a voltage threshold modification feature configured to increase a…

Assignees

• Hung Feng-Chi
• Sze Jhy-Jyi
• Wuu Shou-Gwo
• Taiwan Semiconductor Mfg

Inventors

• Hung Feng-Chi
• Sze Jhy-Jyi
• Wuu Shou-Gwo

Classifications

• H10P30/222

  Electricity · mapped topic

• H10P30/208

  Electricity · mapped topic

• H10P30/204 Primary

  Electricity · mapped topic

• H10P30/22

  Electricity · mapped topic

• H10P14/6304

  Electricity · mapped topic