Semiconductor device and method of forming recesses in substrate for same size or different sized die with vertical integration

Patent metadata

Field	Value
Publication number	US-8994048-B2
Application number	US-96411710-A
Country	US
Kind code	B2
Filing date	Dec 9, 2010
Priority date	Dec 9, 2010
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A semiconductor device has a substrate with a first and second recess formed in a surface of the substrate using a wet etch process. The second recess can have a size different from a size of the first recess. A plurality of conductive vias are formed in a surface of the first and second recesses using a dry etch process. A first conductive layer is formed over the surface of the substrate, over curved side walls of the first and second recesses, and electrically connected to the plurality of conductive vias. A first and second semiconductor die are mounted into the first and second recesses respectively. The second semiconductor die can have a size different from a size of the first semiconductor die. The first and second semiconductor die are electrically connected to the first conductive layer. An interconnect structure is electrically connected to the plurality of conductive vias.

First claim

What is claimed:

1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first recess in a surface of the substrate;
forming a plurality of conductive vias in a surface of the first recess;
forming a first conductive layer over the surface of the substrate over a curved side wall of the first recess and electrically connected to the plurality of conductive vias;
disposing a first semiconductor die within the first recess electrically conn…

Assignees

• Choi Joonyoung
• Kang Yonghee
• Stats Chippac Ltd

Inventors

• Choi Joonyoung
• Kang Yonghee

Classifications

• H10W74/00

  Electricity · mapped topic

• H10W74/142

  Electricity · mapped topic

• H10W90/722

  Electricity · mapped topic

• H10W72/0198

  Electricity · mapped topic

• H10W70/682

  Electricity · mapped topic