Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
US-2015372094-A1 · Dec 24, 2015 · US
Semiconductor device and method of manufacturing the same
US8994034B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994034-B2 |
| Application number | US-201213404411-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 24, 2012 |
| Priority date | Sep 9, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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Disclosed is a semiconductor device including: a first electrode formed of a conductive material; a p-type first silicon carbide (SiC) semiconductor section and an n-type second SiC semiconductor section 230 , connected to the first electrode, containing carbon (C) such that a surface density distribution has a peak at a first interface with the first electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first electrode formed of a conductive material; a p-type first silicon carbide (SiC) semiconductor section, connected to the first electrode, containing carbon (C) such that a surface density distribution has a peak less than 1 nm from a first interface with the first electrode; and an n-type second SiC semiconductor section connected to the first electrode, wherein carbon at the first interface is equal to or smal…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10D64/01366Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8994034B2 cover?
- Disclosed is a semiconductor device including: a first electrode formed of a conductive material; a p-type first silicon carbide (SiC) semiconductor section and an n-type second SiC semiconductor section 230 , connected to the first electrode, containing carbon (C) such that a surface density distribution has a peak at a first interface with the first electrode.
- Who is the assignee on this patent?
- Shimizu Tatsuo, Tsuchiya Yoshinori, Shinohe Takashi, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10D64/01366. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).