Silicon-on-insulator substrate including trap-rich layer and methods for making thereof
US-2024297070-A1 · Sep 5, 2024 · US
US8993454B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993454-B2 |
| Application number | US-201314028025-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2013 |
| Priority date | Oct 5, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a boron-containing amorphous carbon film is disclosed. The boron-containing amorphous carbon film comprises from about 10 to 60 atomic percentage of boron, from about 20 to about 50 atomic percentage of carbon, and from about 10 to about 30 atomic percentage of hydrogen.
Opening claim text (preview).
The invention claimed is: 1. A method of processing a substrate in a processing chamber, comprising: exposing a substrate to a flow of a hydrocarbon-containing gas and a flow of a boron-containing gas mixture in the presence of RF power to deposit a boron-containing amorphous carbon film over the substrate, wherein the boron-containing gas mixture is provided into the processing chamber at a flow rate of about 5,000 sccm to about 15,000 sccm, and wherein the boron-containing gas m…
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